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A new type of electronic materials company that is based on independent research and development, integrating development, production, sales, and service.
09
2021-06
Anhui Botai has been awarded the "Safety Production Standardization Level 3 Enterprise" certificate.
Anhui Botai has been awarded the "Safety Production Standardization Level 3 Enterprise" certificate.
2021-06-09
14
2021-01
High-performance polyolefins are one of the key development focuses of advanced synthetic resins. In recent years, there has been rapid development in areas such as catalyst technology (e.g., metallocene catalysts), polymerization processes, and polymer processing technologies. New catalyst design and regulation methods (such as metal-metal synergistic effects, ligand secondary coordination effects, ligand-substrate effects, redox regulation, etc.) and new heterogeneous polymerization methods (such as self-stabilizing precipitation polymerization) have become effective ways for the efficient preparation of high-performance polyolefins.
2021-01-14
08
2021-01
Outlook for the Photovoltaic Industry in 2021: Grid Parity + Carbon Neutrality
Photovoltaics achieve full price parity, helping the world achieve carbon neutrality: In 2021, the photovoltaic industry will maintain high prosperity, with an expected global installed capacity of 160GW next year, a year-on-year increase of over 30%.
2021-01-08
06
2021-01
The year 2021: The first year of heterojunction batteries?
Photovoltaic cells have reached a critical period of technological transformation. Heterojunction batteries are widely regarded as one of the two promising battery technologies that could replace the existing PERC batteries in the future. Recently, at the first "Solar Valley" Heterojunction Forum held in Taizhou, industry insiders generally believe that the large-scale industrialization of heterojunction batteries is imminent.
2021-01-06
22
2020-12
Recently, the globally renowned business information service provider IHS Markit, after in-depth analysis, predicts that the new installed capacity of photovoltaics in 2021 will reach 158GW.
2020-12-22
04
2020-12
Under the guidance of Moore's Law, the line width of integrated circuits continues to shrink, basically progressing at a pace of reducing to 70% of the original size every two years. For example, it reached 45nm in 2007, 32nm in 2009, and 22nm in 2011. The 28nm process is situated between 32nm and 22nm, and the industry introduced the second generation of high-k dielectric/metal gate process at 32nm based on the earlier 45nm (HKMG) process, laying the foundation for the gradual maturity of 28nm. The year 2013 marked the popularization of the 28nm process, and between 2015 and 2016, the 28nm process began to be widely used in Mobile application processors and basebands. The limit of planar design on wafers can achieve optimized costs at 28nm. In contrast, the subsequent 16/14nm processes require the introduction of FinFET technology, which will increase wafer manufacturing costs by at least 50%. Only applications with a large volume, such as Mobile, can share the costs. In many non-consumer-related applications, the stability of the 28nm process, as well as its performance and cost parameters, are very cost-effective.
2020-12-04
16
2020-09
Transistor selection after 1nm: CFET?
At VLSI 2020, IMEC published an interesting paper on monolithic CFET, and I had the opportunity to interview one of the authors, Airoura Hiroaki. It is well known in the industry that FinFET (FF) is approaching the end of its scaling life. Samsung has announced that they will switch to Horizontal Nanosheets (HNS) at 3nm. TSMC will maintain 3nm FF but is expected to transition to a new architecture at 2nm.
2020-09-16
17
2020-02
IEDM: New interconnection technology beyond 3nm
In a short course on a Sunday during the last IEDM, Chris Wilson from imec presented new interconnect technologies suitable for nodes below 3nm.
2020-02-17
Focus on the research and development and industrialization of new electronic material precursors, and become the leader of localization of advanced electronic materials.
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